R.I.E primarily employs Ion-assisted processes where heavy ion bombardment damages chemical bonds and the radicals chemically react with exposed surface atoms producing a volatile product.
With the I.B.E un-reactive ions will act physically removing atoms from substrate surface.
Designed for HIGH RESOLUTION DRY ETCHING and it is suitable for HIGH UNIFORMITY processes.
SUITABLE for working with INERT and REACTIVE GASES for etching SiO2, Al2O3, Au, Cr2O3, Al, MoSi2, TaSi2, GaAs.
Allowed for SMALL PRODUCTION UNIT with a capability of 10-40 wafers per hour
Especially suitable for IRREGULAR SHAPES.
SUBSTRATE HOLDER connected to RF power supply.
Uniform GAS FLOW at the surface a good plasma confinement thanks to the Pyrex cylinder.
SUBSTRATE HOLDER can be designed to ETCH samples with DIFFERENT SIZES (from 2" up to 8" diameter)
TEMPERATURE :can be HEATED UP to a maximum of 300°C and cooled down to a minimum of -20°C.
The PVD technologies can be COMBINED in a POLYVALENT SOLUTION where two or more processes are required on a substrate, always keeping a clean deposition environment.
Plasma Enhaced Chemical Vapor Deposition is a technology with MEDIUM ENERGY and HIGH DEPOSITION RATE, that uses precursors on liquid or gaseous stage and its chemical componets are broken and then re...
ALDAtomic Layer Deposition is a sequential deposition method, (LAYER by LAYER) on a activated substrate surface that allow to bond them in a continious way using liquid precursors activated by plas...
Heaters and Coolers, Manipulators and special mechanical devices can be engineered under request.