Sputtering is a LOW TEMPERATURE- HIGH ENERGY PVD process, where the target bombarded by ions, is vaporized and the vapours are deposited on the substrate creating a thin atomic layer.
Evaporation is a LOW ENERGY PVD process and HIGH DEPOSITION rate where the material is heated based on the concept that above any material exists a finite “vapor pressure” .
Cathodic Arc Plasma deposition is a HIGH ENERGY PVD process with HIGH DEPOSITION rate, mainly with LOW THERMAL conductive metals.
R.I.E (Reactive Ion Etching) / IBE ( Ion Beam Etching) is an ION-ASSISTED REACTIVE method based on a combination of chemical and physical etching which allows isotropic and anisotropic (uni-directional) MATERIAL REMOVAL.
The PVD technologies can be COMBINED in a POLYVALENT SOLUTION where two or more processes are required on a substrate, always keeping a clean deposition environment.
The best SOLUTION to avoid cross contamination in a MULTI PROCESS DEPOSITION-inclusive running at the same time-several chambers .
Plasma Enhaced Chemical Vapor Deposition is a technology with MEDIUM ENERGY and HIGH DEPOSITION RATE, that uses precursors on liquid or gaseous stage and its chemical componets are broken and then recombined to be on the substrate surface.
Atomic Layer Deposition is a sequential deposition method, (LAYER by LAYER) on a activated substrate surface that allow to bond them in a continious way using liquid precursors activated by plasma or temperature.
Pulsed Laser Deposition uses a HIGH-POWERED PULSED LASER to IRRADIATE the target material, producing a plume of material to be collected on a SUITABLE SUBSTRATE, typically held at high temperature.
In a clean chamber, humidity, temperature and gas concentrated atmosphere IS PRODUCED and CONTROLLED, allowing to TEST and CALIBRATE gas sensor devices.
Heaters and Coolers, Manipulators and special mechanical devices can be engineered under request.