Plasma-enhanced chemical vapour deposition process, also known as “Low-Temperature CVD”. PECVD equipment is designed for materials such as SiO2 at HIGH DEPOSITION RATE, starting from a liquid precursor injected in the chamber in vapor phase.
Takes advantage from the PLASMA GENERATED to significantly lower the temperatures to which the material is deposited on the substrate, allowing to use substrates that cannot withstand high temperatures. EXCELLENT UNIFORMITY, HIGH RATE FILMS, ANTI REFLECTIVE properties or a BARRIER LAYER (corrosion) can be reached.
Inductively or Capacitive Coupled RF-sources. In case of Capacitive coupled sources, deposition can be Anode or Cathode driven. Bubbler or Vapor sources with controlled flow system. Substrate maximum dimensions 300x300 mm and, as an option, it can be cooled.
Customized or Large Area equipment for more specific applications can be designed.
Sputtering is a LOW TEMPERATURE- HIGH ENERGY PVD process, where the target bombarded by ions, is vaporized and the vapours are deposited on the substrate creating a thin atomic layer.
Cathodic Arc Plasma deposition is a HIGH ENERGY PVD process with HIGH DEPOSITION rate, mainly with LOW THERMAL conductive metals.
The PVD technologies can be COMBINED in a POLYVALENT SOLUTION where two or more processes are required on a substrate, always keeping a clean deposition environment.
Heaters and Coolers, Manipulators and special mechanical devices can be engineered under request.